Molecular beam epitaxial growth of hexagonal boron nitride on Ni foils

Abstract Hexagonal boron nitride (h-BN) was synthesized by molecular beam epitaxy on polycrystalline Ni foils using borazine (B 3 N H 6 ) as precursor. Our photoemission analysis shows that several components of and nitrogen are detected, suggesting the complex nature bonds noticeably at h-BN/Ni interface. The BN thickness estimated distribution time-of-flight secondary ion mass spectroscopy. Due to catalytic effect substrate, this is self-limited in range 1–2 layers regardless dose. A spatially resolved study carried out before after transfer h-BN a Si substrate. It strong electronic coupling exists interface between Ni, not only for (111) grains, which disappears Si. In addition, we highlight importance detecting π plasmons spectra confirm hexagonal BN.